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US 2007/0176264 A1Published application
Resistive random access memory device including an amorphous solid electrolyte layer
OwnerJung-hyun Lee, Sang-jun Choiinventors
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Abstract
Provided is a resistive memory device including an amorphous solid electrolyte layer in a storage node. The resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes upper and lower electrodes formed of a bivalent or multivalent metal, and an amorphous solid electrolyte layer and an ion source layer formed of a monovalent metal between the upper and lower electrodes.
Claims14
A storage node comprising:
- two electrodes;
- and
- an amorphous solid electrolyte layer between the two electrodes;
- and
- an ion source layer between one of the two electrodes and the amorphous solid electrolyte layer.
2 more elements
Dependencies are inferred from the claim text.