Active area resistors and methods for making the same
OwnerKunal Parekhinventor
Life of this patent
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Abstract
Resistors used with a semiconductor device may include resistors defined by patterned layers of polysilicon or metal defining diffusion regions within patterns of the patterned layers such that the number of squares of resistance of the resistors may be increased and dishing of glass or other material layers over the resistors are reduced or eliminated. Methods of forming such resistors may include the formation of a polysilicon or metal layer, the patterning of the layer, doping of a semiconductor substrate exposed by the pattern to form a diffused region, and connection of the diffused region to the necessary contacts to form a resistor.
Claims31
A resistor on a semiconductor substrate, comprising:
- a patterned layer overlying the semiconductor substrate;
- a diffused region in the semiconductor substrate defined by the patterned layer, wherein the diffused region defines a resistive path of the resistor;
- and
- at least two contacts in communication with the diffused region.
A semiconductor device, comprising:
- at least one semiconductor substrate;
- at least one patterned layer overlying at least a portion of the at least one semiconductor substrate;
- at least one pattern in the at least one patterned layer, wherein the at least one pattern exposes at least a portion of the at least one semiconductor substrate therethrough;
- a diffused region providing a resistive path in the at least one semiconductor substrate defined by the at least one pattern in the at least one patterned layer;
- and
- at least two contacts in communication with the diffused region.
A method of forming a resistor, comprising:
- forming a layer of material over a semiconductor substrate;
- patterning the layer of material to define a patterned layer having at least one pattern in the patterned layer, wherein at least a portion of the semiconductor substrate is exposed through the at least one pattern;
- doping the at least a portion of the semiconductor substrate exposed through the at least one pattern;
- and
- forming at least one contact with at least a portion of the doped semiconductor substrate.
Dependencies are inferred from the claim text.