Poly emitter bipolar device configuration and fabrication method with an inter-level dielectric deposited by plasma enhanced chemical vapor deposition

A method for fabricating a poly emitter bipolar structure with improved breakdown voltage performance, comprising the steps of:

• providing a semi-insulating substrate;
• forming a collector on the substrate;
• forming a base on the collector;
• forming an emitter on the base;
• providing a first metal contact on the collector which provides a collector contact for the poly emitter bipolar structures;
• providing a second metal contact on the emitter which provides an emitter contact for the poly emitter bipolar structures;
• depositing an inter-level dielectric layer by PECVD on the emitter and collector by optimizing PECVD deposition process condition to adjust the charge in the oxide of inter-level dielectric layer;
• forming three via holes through the inter-level dielectric layer which provides access to the collector contact, a base contact and the emitter contact;
• and
• depositing a fourth metal to contact the collector contact, the base contact and the emitter contact to be a collector electrode, a base electrode and a emitter electrode of the poly emitter bipolar structures.