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US 2007/0176251 A1Published application
Magnetic memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSe-Chung Oh, Jang-Eun Lee, Hyun-Jo Kim, Kyung-Tae Nam, Jun-Ho Jeong
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Abstract
A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a free layer disposed on the insulation layer, a capping layer disposed on the free layer and an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer. The MR enhancing layer is formed of at least one anti-ferromagnetic material.
Claims19
A magnetic device comprising:
- a pinning layer, a pinned layer, and an insulation layer sequentially stacked on a semiconductor substrate;
- a free layer disposed on the insulation layer;
- a capping layer disposed on the free layer;
- and
- an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer,
- wherein the MR enhancing layer is formed of at least one anti-ferromagnetic material.
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A method of fabricating a magnetic memory device, comprising:
- forming a lower electrode on a semiconductor substrate;
- forming an MTJ (magnetic tunnel junction) layer on the lower electrode, the MTJ layer including a pinning layer, a pinned layer, an insulation layer, a free layer, an MR (magnetoresistance) enhancing layer, and a capping layer that are stacked sequentially;
- and
- forming an MTJ pattern on the lower electrode by patterning the MTJ layer,
- wherein the MR enhancing layer is formed using at least one anti-ferromagnetic material to a thickness of about 1 to about 80 Å.
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Dependencies are inferred from the claim text.