Wafer level package having floated metal line and method thereof

A method of forming a wire structure connecting to a bonding pad in a semiconductor chip, comprising:

• forming a passivation layer on an active surface of the semiconductor chip;
• forming a seed metal layer on the bonding pad and the passivation layer;
• forming a metal layer on the seed metal layer;
• etching selected portions of the seed metal layer, leaving unetched a first area overlapping the bonding pad, a second area overlapping a connection pad, and a third area overlapping a metal pad in between the bonding pad and the connection pad, wherein the wire structure is formed by the metal layer being electrically connected to the bonding pad, the metal pad, and the connection pad, but otherwise floating from the passivation layer;
• and
• forming an insulating layer on the wire structure.

A semiconductor chip, comprising:

• a bonding pad connecting to circuitry within the semiconductor chip;
• a passivation layer formed on an active surface of the semiconductor chip;
• a connection pad formed on the passivation layer;
• and
• a metal wire structure connecting the bonding pad and the connection pad, wherein the bonding pad and the connection pad includes a seed metal layer and a metal layer and the wire structure is covered by an insulation layer.