Trenched MOSFETS with improved ESD protection capability

Abstract

A semiconductor power device includes Zener diodes for providing an electrostatic discharge (ESD) protection. The semiconductor power device further includes a thick insulation layer for substantially insulating the Zener diodes from a doped region doped with the body dopant ions of the semiconductor power device whereby the Zener diode is substantially insulated from a doped region below the thick insulation layer for eliminating a channel effect between two terminals of the Zener diode disposed above the doped region. The Zener diode further includes an array of doped regions comprising doped regions doped alternately with a first conductivity type and a second conductivity type with a first and last doped regions doped with a first conductivity type. Specifically, the Zener diode may include an array of doped regions comprising doped regions arranged as N+PN+PN+ regions. Alternately, the Zener diode may include an array of doped regions comprising doped regions arranged as N+PN+PN+PN+ regions.

Dependencies are inferred from the claim text.