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US 2007/0176234 A1Published application
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Koji Dairiki
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Abstract
The present invention is to provide a semiconductor device that achieves high mechanical strength without reducing the circuit scale and that can prevent the data from being forged and altered illegally while suppressing the cost. The present invention discloses a semiconductor device typified by an ID chip that is formed from a semiconductor thin film including a first region with high crystallinity and a second region with the crystallinity inferior to the first region. Specifically, a TFT (thin film transistor) of a circuit requiring high-speed operation is formed by using the first region and a memory element for an identifying ROM is formed by using the second region.
Claims23
A semiconductor device comprising:
- an integrated circuit including a first thin film transistor and a second thin film transistor;
- and
- an antenna electrically connected to the integrated circuit,
- wherein one of a source region and a drain region of the second thin film transistor connects to a gate electrode of the second thin film transistor,
- wherein the first thin film transistor is formed from a first region of a semiconductor film,
- wherein the second thin film transistor is formed from a second region of the semiconductor film, and
- wherein the first region is superior to the second region in crystallinity.
4 more elements
A semiconductor device comprising:
- an integrated circuit including a first thin film transistor and a second thin film transistor;
- and
- an antenna electrically connected to the integrated circuit,
- wherein the integrated circuit comprises:
- a memory cell;
- a microprocessor;
- and
- at least one of a connection terminal, a rectifier circuit for producing a power supply voltage from an alternating signal input into the connection terminal by the antenna, a demodulator circuit for forming a signal by demodulating the alternating signal, and a modulator circuit for modulating a load applied to the antenna by controlling a switch based on data read from the memory cell by the signal,
- wherein the first thin film transistor is formed in the microprocessor,
- wherein the first thin film transistor is formed from a first region of a semiconductor film,
- wherein the second thin film transistor is formed in the memory cell,
- wherein the second thin film transistor is formed from a second region of the semiconductor film,
- wherein one of a source region and a drain region of the second thin film transistor connects to a gate electrode of the second thin film transistor, and
- wherein the first region is superior to the second region in crystallinity.
11 more elements
A semiconductor device comprising:
- an integrated circuit including a first thin film transistor and a second thin film transistor;
- and
- an antenna electrically connected to the integrated circuit,
- wherein one of a source region and a drain region of the second thin film transistor connects to a gate electrode of the second thin film transistor,
- wherein the first thin film transistor is formed from a first region of a semiconductor film,
- wherein the second thin film transistor is formed from a second region of the semiconductor film,
- wherein the first region comprises a crystal grain grown continuously in one direction, and
- wherein the second region comprises a crystal grain having a diameter in a range from a half of a channel length of the second thin film transistor to three times of the channel length thereof.
5 more elements
A semiconductor device comprising:
- an integrated circuit including a first thin film transistor and a second thin film transistor;
- and
- an antenna connected to the integrated circuit,
- wherein the integrated circuit comprises:
- a memory cell;
- a microprocessor;
- and
- one of a connection terminal, a rectifier circuit for producing a power supply voltage from an alternating signal input into the connection terminal by the antenna, a demodulator circuit for forming a signal by demodulating the alternating signal, and a modulator circuit for modulating a load applied to the antenna by controlling a switch based on data read from the memory cell by the signal,
- wherein the first thin film transistor is formed in the microprocessor,
- wherein the first thin film transistor is formed from a first region of a semiconductor film,
- wherein the second thin film transistor is formed in the memory cell,
- wherein the second thin film transistor is formed from a second region of the semiconductor film,
- wherein one of a source region and a drain region of the second thin film transistor connects to a gate electrode of the second thin film transistor,
- wherein the first region comprises a crystal grain grown continuously in one direction, and
- wherein the second region comprises a crystal grain having a diameter in a range from a half of a channel length of the second thin film transistor to three times of the channel length thereof.
12 more elements
A semiconductor device comprising:
- an integrated circuit including a first thin film transistor and a second thin film transistor, and
- an antenna electrically connected to the integrated circuit,
- wherein one of a source region and a drain region of the second thin film transistor connects to a gate electrode of the second thin film transistor,
- wherein the first thin film transistor is formed from a first region of a semiconductor film crystallized by a continuous wave laser,
- wherein the second thin film transistor is formed from a second region of the semiconductor film, and
- wherein the first region is superior to the second region in crystallinity.
3 more elements
A semiconductor device comprising:
- an integrated circuit including a first thin film transistor and a second thin film transistor;
- and
- an antenna connected to the integrated circuit,
- wherein the integrated circuit comprises:
- a memory cell;
- a microprocessor;
- and
- at least one of a connection terminal, a rectifier circuit for producing a power supply voltage from an alternating signal input into the connection terminal by the antenna, a demodulator circuit for forming a signal by demodulating the alternating signal, and a modulator circuit for modulating a load applied to the antenna by controlling a switch based on data read from the memory cell by the signal,
- wherein the first thin film transistor is formed in the microprocessor,
- wherein the first thin film transistor is formed from a first region of a semiconductor film crystallized by a continuous wave laser,
- wherein the second thin film transistor is formed in the memory cell,
- wherein the second thin film transistor is formed from a second region of the semiconductor film,
- wherein one of a source region and a drain region of the second thin film transistor connects to a gate electrode of the second thin film transistor, and
- wherein the first region is superior to the second region in crystallinity.
11 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a semiconductor film having an amorphous structure over a first substrate;
- irradiating the semiconductor film with a laser beam with scanning in a direction, thereby forming a first region and a second region in the semiconductor film;
- and
- forming an integrated circuit comprising a first thin film transistor using the first region in the semiconductor film and a memory cell array comprising a second thin film transistor using the second region in the semiconductor film,
- wherein the first region is superior to the second region in crystallinity.
2 more elements
Dependencies are inferred from the claim text.