Memory cell using a dielectric having non-uniform thickness

A memory cell comprising:

• a substrate having a channel region;
• a first dielectric layer over the substrate, the first dielectric layer having a first portion thicker than a second portion, the first portion overlying at least a portion of the channel region;
• a charge storage layer over the first dielectric layer;
• a second dielectric layer over the charge storage layer;
• and
• a gate electrode over the second dielectric layer and over the channel region, wherein a first sidewall of the gate electrode is over the first portion of the second dielectric layer.

A memory cell structure, comprising:

• a substrate;
• a first memory device having a first gate electrode, a first charge storage layer, and a first dielectric layer, the first charge storage layer and the first dielectric layer being between the substrate and the first gate electrode, and first dielectric layer having a first portion thicker than a second portion;
• a second memory device adjacent the first memory cell;
• and
• a first source/drain region shared by the first and second memory devices.