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US 2007/0176225 A1Published application
Semiconductor device and method of manufacturing the same
OwnerSang-Hoon Lee, Ki-Su Na +4inventors
InventorsSang-Hoon Lee, Ki-Su Na, Man-Sug Kang, Yong-Sun Lee, Yong-Seok Kim, Tae-Jong Lee
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Abstract
A semiconductor device having reduced pitting may be formed from isolation layer patterns on a semiconductor substrate defining an active region, a tunnel oxide layer on the active region, the tunnel oxide layer having a nitrified surface, a floating gate on the tunnel oxide layer, a dielectric layer on the floating gate, and a control gate on the dielectric layer.
Claims20
A semiconductor device, comprising:
- isolation layer patterns on a semiconductor substrate defining an active region;
- a tunnel oxide layer on the active region, the tunnel oxide layer having a nitrified surface;
- a floating gate on the tunnel oxide layer;
- a dielectric layer on the floating gate;
- and
- a control gate on the dielectric layer.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- forming isolation layer patterns on a semiconductor substrate to define an active region;
- forming a tunnel oxide layer on the active region;
- nitrifying a surface of the tunnel oxide layer;
- forming a floating gate on the tunnel oxide layer;
- forming a dielectric layer on the floating gate;
- and
- forming a control gate on the dielectric layer.
4 more elements
Dependencies are inferred from the claim text.