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US 2007/0176220 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsTetsuo Takahashi, Tomohide Terashima
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Abstract
A semiconductor device, including: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a trench formed in the semiconductor region; a trench diffusion layer of the first conductivity type formed along wall surfaces of the trench; and a buried conductor buried in the trench, wherein an insulation film is further disposed between the wall surfaces of the trench and the buried conductor.
Claims17
A semiconductor device, comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor layer of a second conductivity type formed on said semiconductor substrate;
- a trench formed in said semiconductor region;
- a trench diffusion layer of the first conductivity type formed along wall surfaces of said trench;
- and
- a buried conductor buried in said trench, wherein
- an insulation film is further disposed between said wall surfaces of said trench and said buried conductor.
4 more elements
Dependencies are inferred from the claim text.