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AssigneeCanon Kabushiki Kaisha
InventorsMinoru Watanabe, Chiori Mochizuki, Takamasa Ishii
Estimating the term…
An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.
An imaging apparatus comprising:
An imaging apparatus manufacturing method comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Backward citations are indexed for grants only.
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
Manufacture or treatment of image sensors covered by group H10F39/12: wafer-level processing
Image sensors: photoconductor image sensors
Manufacture or treatment of image sensors covered by group H10F39/12: of thin-film-based image sensors
Term end not estimated
1. Field of the Invention
The present invention relates to an imaging apparatus in which pixels each having a switching element, such as a thin-film transistor (TFT), and a conversion element for converting a light signal into an electric signal are arranged in a two-dimensional fashion, and to a radiation imaging apparatus utilizing the imaging apparatus and a scintillator. Moreover, the present invention relates to a radiation imaging apparatus utilizing conversion elements for converting radiations into electric signals. Still moreover, the present invention relates to methods for manufacturing the imaging apparatus and the radiation imaging apparatus.
2. Description of the Related Art
FIG. 1A is a cross-sectional view of a pixel according to First Embodiment of the present invention in the case where repair through a laser beam has not been carried out.
FIG. 1B is a cross-sectional view of a pixel according to First Embodiment of the present invention in the case where repair through a laser beam has been carried out.
FIG. 2A is a plan view of a pixel according to First Embodiment of the present invention.
Embodiments of the present invention will specifically be explained below with reference to the accompanying drawings.
In each embodiment below, the explanation will focus on a case where a radiation imaging apparatus is configured; however, the present invention is not limited to a radiation imaging apparatus that converts a radiation into an electric signal, but can be applied also to an imaging apparatus that converts light such as visible light or infrared light into an electric signal.
In the first place, First Embodiment of the present invention will be explained.