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US 2007/0176212 A1Published application
Integrated circuit having resistance temperature sensor
AssigneeInfineon Technologies AG
InventorMarkus Zundel
Life of this patent
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Abstract
An integrated circuit having a resistance temperature sensor composed of a first resistance structure formed within a trench, and a second resistance structure formed within a mesa region is disclosed. This embodiment makes it possible to suppress or reduce manufacturing-technological fluctuations of the width of the trenches to a resistance value of the resistance temperature sensor.
Claims29
An integrated circuit having a temperature sensor, comprising:
- a semiconductor substrate having trenches and mesa regions;
- a first resistance structure having at least one first connecting region, formed within at least one of the trenches;
- a second resistance structure in at least one of the mesa regions having at least one second connecting region;
- and
- a conductive connection between at least one of the first connecting regions and at least one of the second connecting regions.
2 more elements
A semiconductor having a resistance temperature sensor comprising:
- trenches reaching from a surface of a semiconductor substrate into the semiconductor substrate, wherein adjacent trenches are isolated from one another by a mesa region of the semiconductor substrate;
- a first resistance structure formed within at least one of the trenches, wherein the first resistance structure at least partly adjoins an insulation structure for electrically insulating the first resistance structure from the semiconductor substrate and has at least two first connecting regions for making contact with the first resistance structure, the first connecting regions being electrically isolated from one another;
- a second resistance structure formed within at least one of the mesa regions, wherein the second resistance structure has at least two second connecting regions that are electrically isolated from one another;
- and wherein
- at least one of the first connecting regions is conductively connected to at least one of the second connecting regions.
2 more elements
A method for producing an integrated circuit, comprising:
- providing a semiconductor substrate having trenches and an insulation structure;
- introducing undoped polysilicon into at least one trench;
- jointly introducing dopant elements both into the polysilicon for the formation of a first resistance structure and into at least one mesa region for the formation of a second resistance structure;
- and
- forming a conductive connection between first and second resistance structure.
2 more elements
An integrated circuit comprising:
- a semiconductor substrate having trenches and mesa regions;
- means for providing a first resistance structure having at least two first connecting regions that are electrically isolated from one another, which is formed within at least one of the trenches and is isolated from the semiconductor substrate by an insulation structure;
- means for providing a second resistance structure in at lest one of the mesa regions having at least two second connecting regions that are electrically isolated from one another;
- a conductive connection between at least one of the first connecting regions and at least one of the second connecting regions.
1 more element
Dependencies are inferred from the claim text.