Semiconductor layer structure and method for fabricating a semiconductor layer structure

A semiconductor layer structure comprising:

• a substrate made of a first semiconductor material;
• a first layer made of a second semiconductor material disposed on the substrate, the first layer and the substrate defining an interface therebetween;
• an impurity region enriched with impurity atoms, the impurity region disposed at a location selected from the group consisting of:
• in the first layer and below the interface between the first layer and the substrate;
• a cavity layer within the region enriched with impurity atoms, the cavity layer including cavities produced by ion implantation;
• at least one epitaxial layer applied to layer, the at least one epitaxial layer being substantially crack-free, and a residual strain of the at least one epitaxial layer being less than or equal to 1 GPa;
• and
• a defect region including dislocations and stacking faults within the cavity layer.

A semiconductor layer structure comprising:

• a substrate of monocrystalline silicon;
• a first layer of silicon carbide applied to the substrate;
• a defect region including dislocations, the region disposed adjacent the first layer;
• and
• a cavity layer including a plurality of cavities produced by implantation of light gas ions selected from the group consisting of hydrogen ions, noble gas ions, and a combination of hydrogen ions and noble gas ions.

A semiconductor layer structure comprising:

• at least one monocrystalline epitaxial layer comprising a nitride compound semiconductor,
• a first layer of monocrystalline silicon carbide;
• and
• a cavity layer adjacent the first layer, the cavity layer comprising cavities produced by implantation of light gas ions selected from the group consisting of hydrogen ions, noble gas ions, and a combination of hydrogen ions and noble gas ions.