Semiconductor device and method of manufacture thereof

A semiconductor device of complementary structure comprising:

• a semiconductor substrate including a first semiconductor region having compressive stress in a first direction along a surface of the semiconductor region and tensile stress in a second direction along the surface different from the first direction and a second semiconductor region having tensile stress in the first direction along the surface and compressive stress in the second direction along the surface;
• a field effect transistor of a first conductivity type formed in each of the first semiconductor region and the second semiconductor region and including source and drain regions separately arranged along the direction of compressive stresses;
• and
• a field effect transistor of a second conductivity type formed in each of the first semiconductor region and the second semiconductor region and including source and drain regions separately arranged along the direction of tensile stresses.

A method of manufacturing a semiconductor device of complementary structure comprising:

• giving first and second displacements in opposite directions, respectively, along one pair of parallel edges of a semiconductor region having a rectangle or a parallelogram and providing third and fourth displacements in opposite directions, respectively, along the other pair of parallel edges of the semiconductor region, so that, for any pair of two adjoining edges, a displacement vector along one of the edges becomes the mirror reflection of the displacement vector along the other edge, with respect to a bisectional line of the interior angle formed by the two adjoining edges;
• forming a first field effect transistor of a first conductivity type in the semiconductor region, the first field effect transistor having drain and source separately arranged parallel to bisectional lines of a first pair of diagonally opposing interior angles;
• and
• forming a second field effect transistor of a second conductivity type in the semiconductor region, the second field effect transistor having drain and source regions separately arranged parallel to bisectional lines of the remaining pair of diagonally opposing interior angles.

A method of manufacturing a semiconductor device of complementary structure comprising:

• forming, on a semiconductor substrate, a semiconductor region having a rectangle or parallelogram shape and including a first corner and a second corner which are diagonally opposing to each other;
• subjecting a first pair of edges of the semiconductor region connected to the vertex of the first corner to such first displacements that an addition of the first displacement vectors points from the second corner towards the first corner, and subjecting the remaining pair of edges of the semiconductor region connected to the vertex of the second corner to such second displacements that an addition of the second displacement vectors points from the first corner towards the second corner;
• forming a first field effect transistor of a first conductivity type in the semiconductor region, the first field effect transistor having drain and source regions opposed to each other along one of two diagonals of the semiconductor region;
• and
• forming a second field effect transistor of a second conductivity type in the semiconductor region, the second field effect transistor having drain and source regions opposed to each other along the other of the diagonals of the semiconductor region.