Semiconductor light emitting device
AssigneeMitsubishi Electric Corporation
InventorKyosuke Kuramoto
Life of this patent
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Abstract
A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second conductivity type and made of InxAlyGa1-x-yN (0≦x≦1 and 0≦y≦1), and a second cladding layer of the second conductivity type, laminated, in orders, on a substrate. The electron barrier layer has a larger band gap than each of the active layer and the second cladding layer. The thickness of the electron barrier layer is in a range from 2 nm to 7 nm.
Claims10
A semiconductor light emitting device including a gallium nitride compound semiconductor, the device comprising:
- a substrate;
- and
- a first cladding layer having a first conductivity type, an active layer, an electron barrier layer having a second conductivity type and of InxAlyGa1-x-yN (0≦x≦1 and 0≦y≦1), and a second cladding layer having the second conductivity type, laminated, in order, on the substrate wherein
- the electron barrier layer has a larger band gap than each of the active layer and the second cladding layer, and
- thickness of the electron barrier layer is in a range from 2 nm to 7 nm.
Dependencies are inferred from the claim text.