Wide range radiation detector and manufacturing method
AssigneeNational University Corporation Shizuoka University
InventorsYoshinori Hatanaka, Toru Aoki
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Abstract
There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.
Claims8
A radiation detector, comprising:
- a II-VI compound semiconductor substrate that absorbs radiation having a first energy;
- a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of said II-VI compound semiconductor substrate;
- a metal layer containing at least one of a group III element and a group V element provided on said II-VI compound semiconductor layer;
- a IV semiconductor layer of a second conductivity type opposite to said first conductivity type provided on said metal layer;
- and
- a IV semiconductor substrate that absorbs radiation having a second energy different to said first energy provided on said IV semiconductor layer.
A method for manufacturing a radiation detector comprising the steps of:
- forming a metal layer containing at least one of a group III element and a group V element on a main surface of at least one of a II-VI compound semiconductor substrate that absorbs radiation having a first energy and a IV semiconductor substrate that absorbs radiation having a second energy different to said first energy;
- and
- disposing said II-VI compound semiconductor substrate and said IV semiconductor substrate facing one another such that said metal layer is sandwiched therebetween, and compression-bonding said II-VI compound semiconductor substrate and said IV semiconductor substrate together by heating.
Dependencies are inferred from the claim text.