Nitride-based group III-V semiconductor substrate and fabrication method therefor, and nitride-based group III-V light-emitting device
AssigneeHitachi Cable, Ltd.
InventorMasatomo Shibata
Life of this patent
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Abstract
A nitride-based group III-V semiconductor substrate has an as-grown surface on the surface thereof; and a flat surface on the back surface of the substrate. The c-axis of a nitride-based group III-V semiconductor crystal composing the substrate is substantially perpendicular to the surface of the substrate or inclined at a predetermined angle to the surface of the substrate.
Claims27
A nitride-based group III-V semiconductor substrate, comprising:
- an as-grown surface on a surface of the substrate;
- and
- a flat surface on a back surface of the substrate,
- wherein a c-axis of a nitride-based group III-V semiconductor crystal composing the substrate is oriented substantially perpendicular to the surface of the substrate.
A nitride-based group III-V semiconductor substrate, comprising:
- an as-grown surface on a surface of the substrate;
- and
- a flat surface on a back surface of the substrate,
- wherein a c-axis of a nitride-based group III-V semiconductor crystal composing the substrate is inclined at a predetermined angle to the surface of the substrate.
A method of fabricating a nitride-based group III-V semiconductor substrate, comprising the steps of:
- growing a nitride-based group III-V semiconductor film on a hetero-substrate that comprises a c-plane on its surface, and then depositing a metallic film thereon;
- thermally treating the substrate with the metallic film deposited thereon in an atmosphere containing hydrogen gas or hydrogen-containing compound gas, to form a void in the nitride-based group III-V semiconductor film;
- depositing a nitride-based group III-V semiconductor crystal thereon;
- separating the substrate from the nitride-based group III-V semiconductor crystal, to obtain the nitride-based group III-V semiconductor crystal with a c-axis substantially perpendicular to the surface;
- and
- flattening a back surface of the nitride-based group III-v semiconductor crystal.
A method of fabricating a nitride-based group III-V semiconductor substrate, comprising the steps of:
- growing a nitride-based group III-V semiconductor film on a hetero-substrate that comprises an off-angle, and then depositing a metallic film thereon;
- thermally treating the substrate with the metallic film deposited thereon in an atmosphere containing hydrogen gas or hydrogen-containing compound gas, to form a void in the nitride-based group III-V semiconductor film;
- depositing thereon a nitride-based group III-V semiconductor crystal that comprises an off-angle;
- separating the substrate from the nitride-based group III-V semiconductor crystal, to obtain the nitride-based group III-V semiconductor crystal with a c-axis inclined at a predetermined angle to the surface;
- and
- flattening the back surface of the nitride-based group III-V semiconductor crystal.
Dependencies are inferred from the claim text.