Semiconductor light emitting device and its manufacture method

A manufacture method for a semiconductor light emitting device, the method comprising:

• (a) preparing a device substrate including a translucent substrate and a semiconductor part over said translucent substrate, said semiconductor part comprising a first semiconductor layer of a first conductivity type over said translucent substrate, an optical emission layer over said first semiconductor layer and a second semiconductor layer of a second conductivity type over said optical emission layer;
• (b) forming a recess along a first closed line pattern, in plan view, defined on said second semiconductor layer, said recess downwardly extending through said second semiconductor layer and said optical emission layer and reaching said first semiconductor layer;
• (c) forming a downward slope towards said translucent substrate in at least a portion of a side end face of said semiconductor part along a second closed line pattern, in plan view, defined on said second semiconductor layer, said second closed plan-view line pattern formed by the downward slope surrounding said first closed plan-view line pattern of said recess;
• (d) forming a first electrode electrically connected to said first semiconductor layer on said downward slope of said side end face of the semiconductor part;
• (e) forming a second electrode on said second semiconductor layer inside said first closed plan-view line pattern of said recess;
• and
• (f) filling said recess with a transparent member.

A semiconductor light emitting device, comprising,

• a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess;
• a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode;
• and
• a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.