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US 2007/0176180 A1Published application
Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same
AssigneeAu Optronics Corporation
InventorsChien-Chou Hsu, Tsung-Yi Hsu
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Abstract
A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and a second region of a substrate, respectively. The first amorphous silicon region is thinner than the second amorphous silicon region. The amorphous silicon structure is crystallized to form the polysilicon structure with a first polysilicon region and a second polysilicon region corresponding to the first amorphous silicon region and the second amorphous silicon region.
Claims4
A thin film transistor panel, comprising:
- a substrate;
- a first transistor disposed on the substrate and comprising a first polysilicon region serving as a driving circuit region;
- and
- a second transistor disposed on the substrate and comprising a second polysilicon region serving as a display region, wherein the second polysilicon region is formed by a single layer;
- wherein the entire first polysilicon region is thinner than the entire second polysilicon region and a grain size of the entire first polysilicon region is larger than that of the entire second polysilicon region.
2 more elements
Dependencies are inferred from the claim text.