Nitride semiconductor light-emitting device and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorDae Sung Kang
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Abstract
A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer.
Claims20
A nitride semiconductor light emitting device comprising:
- a first nitride layer including an irregular, uneven surface;
- an active layer on the irregular, uneven surface;
- and
- a second nitride layer on the active layer,
- wherein the active layer includes a plurality of quantum dots.
A method for manufacturing a nitride semiconductor light emitting device, the method comprising:
- forming a first nitride layer on a substrate, the first nitride layer including an irregular, uneven surface;
- forming an active layer along the irregular, uneven surface;
- and
- forming a second nitride layer on the active layer.
The method according to claim 12, comprising:
- forming a buffer layer between the substrate and the first nitride layer;
- and
- forming an un-doped nitride layer on the buffer layer.
The method according to claim. 11, comprising forming a third nitride layer on the second nitride layer.
Dependencies are inferred from the claim text.