Back to results
US 2007/0176160 A1Published application
Electron tube
AssigneeHamamatsu Photonics K.K.
InventorsShoichi Uchiyama, Yasufumi Takagi, Harumasa Yoshida
Life of this patent
Estimating the term…
Abstract
A GaN-based semiconductor photocathode is applied to an electron tube. A GaN-based compound semiconductor layer is laterally grown on a substrate, and incorporated in the electron tube. The crystal defects of the compound semiconductor layer are reduced, whereby an electron tube which has inconceivably high sensitivity is realized.
Claims15
An electron tube comprising:
- a vacuum container;
- a photocathode disposed inside the vacuum container, including:
- a substrate having an uneven surface,
- first nitride compound semiconductor layer grown in depressions and on projections of the uneven surface of the substrate, and
- a second nitride compound semiconductor layer that is grown on the first nitride compound semiconductor layer and has an impurity concentration higher than that of the first nitride compound semiconductor layer;
- and
- an anode that is disposed inside the vacuum container and collects electrons emitted from the photocathode.
4 more elements
Dependencies are inferred from the claim text.