Architecture for ribbon ion beam ion implanter system
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsKourosh Saadatmand, Peter Kellerman
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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsKourosh Saadatmand, Peter Kellerman
Estimating the term…
An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.
An ion implanter system, comprising:
A method of ion implanting a work piece, the method comprising the steps of:
An architecture for a ribbon ion beam ion implanter system, the architecture comprising:
Dependencies are inferred from the claim text.