Apparatuses and methods for analyzing semiconductor workpieces

An apparatus for analyzing a semiconductor workpiece, the apparatus comprising:

• a radiation source configured to irradiate at least a portion of the workpiece;
• a first metrology unit configured to measure photoluminescence from the workpiece, the first metrology unit including (a) a first detector to measure photoluminescence from the irradiated portion of the workpiece, and (b) a first processor operatively connected to the first detector to produce a photoluminescence map of the workpiece;
• a second metrology unit configured to determine a topographical profile of the workpiece, the second metrology unit including (a) a second detector to measure radiation reflected from the irradiated portion of the workpiece and generate a condition signal in response thereto, and (b) a second processor operatively coupled to the second detector for evaluating the geometry of the surface of the workpiece based on the condition signal to produce a topographical profile of the surface of the workpiece;
• and
• a control unit operatively coupled to the first metrology unit and the second metrology unit to receive and associate data from the photoluminescence map and the topographical profile to produce an integrated map of the workpiece.

An apparatus for analyzing a semiconductor workpiece, the apparatus comprising:

• a first metrology unit;
• a second metrology unit;
• and
• a control unit operatively coupled to the first metrology unit and the second metrology unit, the control unit having a computer-readable medium containing instructions to perform a method comprising
• irradiating the workpiece with radiation having a first wavelength;
• measuring photoluminescence from the portion of the workpiece irradiated with the first wavelength of radiation using the first metrology tool;
• irradiating the workpiece with radiation having a second wavelength, the second wavelength being different than the first wavelength;
• determining a topographical profile of the portion of the workpiece irradiated with the second wavelength of radiation using the second metrology unit;
• and
• forming an integrated map of the workpiece based on the measured photoluminescence and topographical profile.

An apparatus for analyzing a semiconductor workpiece, the apparatus comprising:

• means for measuring photoluminescence from a semiconductor workpiece;
• means for determining a topographical profile of a surface of the workpiece;
• and
• control means for associating data from the photoluminescence means and the topographical profile means to produce an integrated map of the workpiece.

A method for analyzing a semiconductor workpiece, the method comprising:

• irradiating a portion of a workpiece;
• measuring photoluminescence from the irradiated portion of the workpiece;
• determining a topographical profile of the irradiated portion of the workpiece;
• and
• forming an integrated map of the workpiece based on the measured photoluminescence and topographical profile.

A method for analyzing a semiconductor workpiece, the method comprising:

• irradiating the workpiece with radiation having a first wavelength;
• measuring photoluminescence from the portion of the workpiece irradiated with the first wavelength of radiation using a first metrology tool;
• irradiating the workpiece with radiation having a second wavelength, the second wavelength being different than the first wavelength;
• determining an optical profile of the workpiece irradiated with the second wavelength of radiation using the second metrology unit;
• and
• forming an integrated map of the workpiece based on the measured photoluminescence and optical profile.