Methods and apparatus for in-situ substrate processing

A method for processing a substrate, the substrate including a barrier layer and deposited photoresist, the method comprising:

• supplying and ionizing a first set of gases to partially etch the deposited photoresist at a first portion of the substrate in a plasma processing chamber;
• supplying and ionizing a second set of gases to partially etch the deposited photoresist at a second portion of the substrate in the plasma processing chamber;
• and
• removing the barrier layer in the plasma processing chamber.

A method for processing a substrate in a plasma processing chamber in a plasma processing system, the method comprising:

• injecting a first set of gases into the plasma processing chamber;
• injecting a second set of gases into the plasma processing chamber;
• exciting the first set of gases into plasma;
• performing at least one of etching and deposition on the substrate utilizing the plasma;
• and
• heating an electrode of the plasma processing system to increase collision between the plasma and the second set of gases, thereby reducing a processing rate of the at least one of etching and deposition.