Notch-Free Etching of High Aspect SOI Structures Using A Time Division Multiplex Process and RF Bias Modulation
OwnerDavid Johnson, Russell Westerman +1inventors
InventorsDavid Johnson, Russell Westerman, Sunil Srinivasan
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Abstract
The present invention provides a method and an apparatus for reducing, or eliminating, the notching observed in the creation of SOI structures on a substrate when plasma etching through an alternating deposition/etch process by modulating the RF bias that is applied to the cathode. Modulation of the bias voltage to the cathode is accomplished either discretely, between at least two frequencies, or continuously during the alternating deposition/etch process.
Claims23
A method for etching a feature in a substrate during a time division multiplex process comprising the steps of:
- placing the substrate in a vacuum chamber;
- subjecting the substrate to the time division multiplex process;
- generating a plasma in at least one step of the time division multiplex process;
- applying a modulated bias to the substrate;
- and
- removing the substrate from the vacuum chamber.
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Dependencies are inferred from the claim text.