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AssigneeTokyo Electron Limited
InventorsEiichi NISHIMURA, Takamichi Kikuchi
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A substrate processing apparatus that enables an oxide layer and an organic layer to be removed efficiently. A substrate formed at its surface with an organic layer covered with the oxide layer is housed in a chemical reaction processing apparatus of the substrate processing apparatus, in which the oxide layer is subjected to chemical reaction with gas molecules, and thus a product is produced on the substrate surface. The substrate is heated in a chamber of a heat treatment apparatus of the substrate processing apparatus, whereby the product is vaporized and the organic layer is exposed. Microwaves are then introduced into the chamber into which oxygen gas is supplied, whereby there are produced oxygen radicals that decompose and remove the organic layer.
A substrate processing apparatus that carries out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the substrate processing apparatus comprising:
A substrate processing method for carrying out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the substrate processing method comprising:
A computer-readable storage medium storing a program for causing a computer to implement a substrate processing method for carrying out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the program comprising:
Dependencies are inferred from the claim text.