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US 2007/0167031 A1Published application
Semiconductor device and fabrication method of the same
AssigneeEudyna Devices Inc.
InventorHiroyuki Oguri
Life of this patent
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Abstract
A fabrication method of a semiconductor device includes forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method and selectively treating the compound semiconductor layer with use of the silicon nitride layer for a mask. The silicon nitride layer has a refraction index of less than 1.85. The compound semiconductor layer includes Ga.
Claims18
A fabrication method of a semiconductor device comprising:
- forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method,
- the silicon nitride layer having a refraction index of less than 1.85,
- the compound semiconductor layer including Ga;
- and
- selectively treating the compound semiconductor layer with use of the silicon nitride layer for a mask.
2 more elements
A fabrication method of a semiconductor device comprising:
- forming a silicon nitride layer on a compound semiconductor layer with a plasma CVD method,
- the silicon nitride layer having a refraction index of less than 1.85,
- the compound semiconductor layer including Ga;
- and
- forming a protective layer denser than the silicon nitride layer on the silicon nitride layer.
2 more elements
A semiconductor device comprising:
- a compound semiconductor layer that includes Ga and that is provided on a substrate;
- a silicon nitride layer that is provided on the compound semiconductor layer and that has a refraction index of less than 1.85;
- a protective layer that is provided on the silicon nitride layer and that is denser than the silicon nitride layer.
Dependencies are inferred from the claim text.