Film formation method and apparatus for semiconductor process
AssigneeTokyo Electron Limited
InventorsPao-Hwa CHOU, Kazuhide Hasebe
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Abstract
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
Claims32
A film formation method for a semiconductor process for forming an insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas, the method comprising repeatedly performing:
- supply of the first process gas to the process field;
- supply of the second process gas to the process field;
- and
- supply of the third process gas to the process field,
- wherein the supply of the third process gas comprises an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
A film formation apparatus for a semiconductor process, comprising:
- a process container having a process field configured to accommodate a target substrate;
- a support member configured to support the target substrate inside the process field;
- a heater configured to heat the target substrate inside the process field;
- an exhaust system configured to exhaust gas inside the process field;
- a first process gas supply circuit configured to supply a first process gas containing a silane family gas to the process field;
- a second process gas supply circuit configured to supply a second process gas containing a nitriding gas to the process field;
- a third process gas supply circuit configured to supply a third process gas containing a carbon hydride gas to the process field;
- and
- a control section configured to control an operation of the apparatus,
- wherein, in order to form an insulating film on the target substrate by CVD, the control section repeatedly executes:
- supply of the first process gas to the process field;
- supply of the second process gas to the process field;
- and
- supply of the third process gas to the process field,
- wherein the supply of the third process gas comprises an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus for a semiconductor process for forming an insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas, wherein the program instructions, when executed by the processor, cause the film formation apparatus to repeatedly execute:
- supply of the first process gas to the process field;
- supply of the second process gas to the process field;
- and
- supply of the third process gas to the process field,
- wherein the supply of the third process gas comprises an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
Dependencies are inferred from the claim text.