Production method for semiconductor device
AssigneeRohm Co., Ltd.
InventorMineo Miura
Life of this patent
Estimating the term…
Abstract
In a production process for a semiconductor device employing an SiC semiconductor substrate (1), the SiC semiconductor substrate (1) is mounted on a susceptor (23), and a C heating member (3) of carbon is placed on a surface of the SiC semiconductor substrate (1). An annealing process is performed to form an impurity region in the surface of the SiC semiconductor substrate (1) by causing the susceptor (23) and the C heating member (3) to generate heat at high temperatures.
Claims5
A semiconductor device production method for producing a semiconductor device by forming an impurity region in a front surface of a silicon carbide semiconductor substrate, the method comprising the steps of:
- bringing a heating member of carbon into contact with the front surface of the silicon carbide semiconductor substrate selectively ion-implanted with an impurity element;
- and
- heat-treating the silicon carbide semiconductor substrate with the heating member in contact with the front surface of the silicon carbide semiconductor substrate.
Dependencies are inferred from the claim text.