US 2007/0167023 A1 · Manufacturing method for wiring

Abstract

In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.

Claims24

Dependent claims

A method for forming a semiconductor device comprising:

forming a first conductive pattern over a substrate in a selective manner;
discharging a compound to selectively form a first resist pattern over the first conductive pattern;
irradiating a light on the first resist pattern;
patterning the first resist pattern into a second resist pattern by development after the irradiation of the light;
and
patterning the first conductive pattern into a second conductive pattern by etching using the second resist pattern as a mask under an atmospheric pressure or a pressure close to the atmospheric pressure.

3 more elements

Dependencies are inferred from the claim text.

Manufacturing method for wiring

Life of this patent

Manufacturing method for wiring

Life of this patent

Abstract

Claims24