Method of fabricating semiconductor device
AssigneeFujitsu Limited
InventorYoshihisa Iba
Life of this patent
Estimating the term…
Abstract
After low dielectric constant films are formed on a wiring, hardmasks are formed on the low dielectric constant films. A resistmask is formed on the hardmasks. Via holes are formed in the low dielectric constant films using the resistmask. Ashing the resistmask is performed. During this process, a protection film is formed by sticking a sputtered material generated from the resistmask at least onto side surfaces of the via holes. Thereafter, the via holes are extended to the wiring, and a conductive material is buried into the via holes.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming an inorganic low dielectric constant film over a wiring;
- forming a hardmask over the inorganic low dielectric constant film;
- forming a resistmask over the hardmask;
- forming an opening in the inorganic low dielectric constant film using the resistmask;
- ashing the resistmask with forming a protection film by sticking a sputtered material generated from the resistmask at least onto a side surface of the opening;
- extending the opening to the wiring;
- and
- burying a conductive material in the opening.
A method of fabricating a semiconductor device comprising:
- forming an inorganic low dielectric constant film over a wiring;
- forming a hardmask over the inorganic low dielectric constant film;
- forming a resistmask over the hardmask;
- forming an opening in the inorganic low dielectric constant film using the resistmask;
- ashing the resistmask;
- forming a protection film by sticking a sputtered material generated from the hardmask by sputter-etching the hardmask during over-ashing the resistmask at least onto a side surface of the opening;
- extending the opening to the wiring;
- and
- burying a conductive material in the opening.
A method of fabricating a semiconductor device comprising:
- forming an inorganic low dielectric constant film over a wiring;
- forming a hardmask over the inorganic low dielectric constant film;
- forming a first resistmask over the hardmask;
- forming a first opening in the inorganic low dielectric constant film using the first resistmask;
- ashing the first resistmask;
- forming a second resistmask over the hardmask;
- patterning the hardmask using the second resistmask;
- ashing the second resistmask with forming a protection film by sticking a sputtered material generated from the second resistmask at least onto a side surface of the first opening;
- forming a second opening in the inorganic low dielectric constant film using the hardmask;
- extending the first opening to the wiring;
- and
- burying a conductive material in the first and second openings.
Dependencies are inferred from the claim text.