Method for performing a CMP process on a wafer formed with a conductive layer
AssigneeDongbu Electronics Co., Ltd.
InventorYoung Jeong
Life of this patent
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Abstract
A CMP method for performing a chemical mechanical polishing process wherein an edge of a wafer formed with a conductive layer is uniformly polished is provided. The CMP method includes preparing a wafer, forming a chip pattern in effective dies of the wafer and ineffective dies on edges of the wafer, depositing an insulating layer on the wafer, forming a trench and via hole in a portion of the insulating layer deposited on the effective die, forming a conductive layer on the wafer, and performing a CMP process on the wafer until a portion of the conductive layer formed on the ineffective die is removed.
Claims4
A method for performing a CMP (Chemical Mechanical Polishing) process on a wafer formed with a conductive layer, comprising:
- preparing a wafer;
- dividing the wafer into pattern areas serving as effective dies and non-pattern areas serving as ineffective dies;
- forming a transistor in the pattern and non-pattern areas;
- forming an insulating layer on the wafer;
- forming a trench and a via hole at a portion of the insulating layer positioned in the pattern areas;
- forming an anti-diffusion layer on the wafer including the trenches and the via holes;
- forming a conductive layer on the wafer;
- and
- planarizing the conductive layer by performing a CMP process.
A method for performing a CMP process on a wafer formed with a conductive layer, comprising:
- preparing a wafer;
- forming a chip pattern in effective dies of the wafer and ineffective dies on edges of the wafer;
- depositing an insulating layer on the wafer;
- forming a trench and via hole in a portion of the insulating layer deposited on the effective die;
- forming a conductive layer on the wafer;
- and
- performing a CMP process on the wafer until at least a portion of the conductive layer formed on the ineffective die is removed.
Dependencies are inferred from the claim text.