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AssigneeMitsui Chemicals, Inc.
InventorsYoshihisa Saimoto, Makoto Kataoka, Kouji Igarashi, Shinichi Hayakawa
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The present invention relates to an adhesive film capable of preventing damage to a non-metal-film-formed surface when forming a metal film on a semiconductor wafer and further capable of reducing contamination on the wafer surface. The adhesive film comprises a base film laminated with at least one film layer having a gas transmission rate of not more than 5.0 cc/m2·day·atm with an adhesive layer formed on one surface thereof. By protecting the non-metal-film-formed surface, a washing step using a solvent can be omitted and contamination on the non-metal-film-formed surface can also be reduced, thus resulting in enhancement of productivity and workability.
A method for forming a metal film on a non-circuit-formed surface of a semiconductor wafer, wherein a metal film is formed by applying an adhesive film, comprising an adhesive layer formed on one surface of a base film comprising at least one film layer having a gas transmission rate of not more than 49.35 ml/m2·day/MPa, to a circuit-formed surface of a semiconductor wafer (a non-metal-film-formed surface).
An adhesive film for forming a metal film on a non-circuit-formed surface of a semiconductor wafer, comprising an adhesive layer formed on one surface of a base film comprising at least one film layer having a gas transmission rate of not more than 49.35 ml/m2·day/MPa.
An adhesive film for forming a metal film on a non-circuit-formed surface of a semiconductor wafer, comprising an adhesive layer formed on one surface of a base film comprising at least one film layer having a gas transmission rate of not more than 9.87 ml/m2·day/MPa and water absorptance of not more than 1.0 weight %.
Dependencies are inferred from the claim text.