Method of manufacturing a semiconductor device and method of etching an insulating film
AssigneeFoundation for Advancement of International Science
InventorsTadahiro Ohmi, Tetsuya Goto
Life of this patent
Estimating the term…
Abstract
During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities doped in the silicon surface can be prevented.
Claims25
A method of manufacturing a semiconductor device, comprising an etching step of opening a contact hole in an insulating film by reactive ion etching;
- wherein said etching step includes a first step of carrying out etching at a predetermined etching rate and a second step of carrying out etching at a rate lower than said predetermined etching rate;
- and
- wherein said second step is carried out after said first step is carried out and before an underlayer is exposed by the opening, and a gas with a composition and a supply amount is supplied in said second step, at least one of said composition and said supply amount of said gas being different from a composition and a supply amount of a gas supplied in said first step.
A method of manufacturing a semiconductor device comprising a step of carrying out etching by the use of a gas;
- wherein at least one of a composition and a flow rate of said gas is changed during said etching and the etching is ended in a state where a surface of an underlayer is protected.
A method of etching an insulating film for forming an opening in the insulating film by reactive ion etching, wherein:
- said etching includes a first step of carrying out etching at a predetermined rate and a second step of carrying out etching at a rate slower than said rate, and said second step is carried out after said first step is carried out and before an underlayer is exposed by said opening;
- and
- wherein a gas with a composition and a supply amount is supplied in said second step, at least one of said composition and said supply amount being different from a composition and a supply amount of a gas supplied in said first step.
Dependencies are inferred from the claim text.