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US 2007/0166999 A1Published application
Systems and methods of forming refractory metal nitride layers using disilazanes
AssigneeMicron Technology, Inc.
InventorBrian Vaartstra
Life of this patent
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Abstract
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.
Claims33
A vapor deposition method comprising:
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn, (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- and
- contacting the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes with a substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
1 more element
A vapor deposition method comprising:
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- providing a vapor comprising one or more silicon precursor compounds other than the one or more disilazanes;
- and
- contacting the vapors comprising the one or more refractory metal precursor compounds, the one or more disilazanes, and the one or more silicon precursor compounds other than the one or more disilazanes with a substrate to form a refractory metal silicon nitride layer on one or more surfaces of the substrate.
2 more elements
A vapor deposition method comprising:
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- providing a vapor comprising one or more metal-containing precursor compounds having a formula different than Formula I;
- and
- contacting the vapors comprising the one or more refractory metal precursor compounds of the formula (Formula I), the one or more disilazanes, and the one or more metal-containing precursor compounds having a formula different than Formula I, with a substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.
2 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- and
- contacting the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes with a semiconductor substrate or substrate assembly to form a refractory metal nitride layer on one or more surfaces of the semiconductor substrate or substrate assembly.
1 more element
A method of manufacturing a semiconductor structure, the method comprising:
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- providing a vapor comprising one or more silicon precursor compounds other than the one or more disilazanes;
- and
- directing the vapors comprising the one or more refractory metal precursor compounds, the one or more disilazanes, and the one or more silicon precursor compounds other than the one or more disilazanes to a semiconductor substrate or substrate assembly, to form a refractory metal silicon nitride layer on one or more surfaces of the semiconductor substrate or substrate assembly.
2 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- providing a vapor comprising the one or more metal-containing precursor compounds having a formula different than Formula I;
- and
- directing the vapors comprising the one or more refractory metal precursor compounds of the formula (Formula I), the one or more disilazanes, and the one or more metal-containing precursor compounds having a formula different than Formula I, to a semiconductor substrate or substrate assembly to form a refractory metal nitride layer on one or more surfaces of the semiconductor substrate or substrate assembly.
2 more elements
A vapor deposition method comprising:
- contacting a vapor comprising one or more refractory metal precursor compounds with a substrate comprising a silicon-containing surface and allowing the one or more compounds to chemisorb on the silicon-containing surface, wherein the one or more refractory metal precursor compounds are of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- and
- contacting a vapor comprising one or more disilazanes with the substrate having the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the substrate, wherein the one or more disilazanes are of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3.
A vapor deposition method comprising:
- contacting a vapor comprising one or more refractory metal precursor compounds with a substrate comprising a silicon-containing surface and allowing the one or more compounds to chemisorb on the silicon-containing surface, wherein the one or more refractory metal precursor compounds are of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- contacting a vapor comprising one or more disilazanes with the substrate having the chemisorbed compounds thereon, wherein the one or more disilazanes are of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- and
- contacting a vapor comprising one or more silicon precursor compounds other than the one or more disilazanes with the substrate having the chemisorbed compounds thereon to form a refractory metal silicon nitride barrier layer on one or more silicon-containing surfaces of the substrate.
1 more element
A vapor deposition method comprising:
- contacting a vapor comprising one or more refractory metal precursor compounds with a substrate comprising a silicon-containing surface and allowing the one or more compounds to chemisorb on the silicon-containing surface, wherein the one or more refractory metal precursor compounds are of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- contacting a vapor comprising one or more disilazanes with the substrate having the chemisorbed compounds thereon, wherein the one or more disilazanes are of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3;
- and
- contacting one or more metal-containing precursor compounds having a formula different than Formula I with the substrate to form a refractory metal silicon nitride barrier layer on one or more silicon-containing surfaces of the substrate.
1 more element
A method of forming a layer on a substrate, the method comprising:
- contacting a vapor comprising one or more refractory metal precursor compounds with a semiconductor substrate or substrate assembly comprising a silicon-containing surface and allowing the one or more compounds to chemisorb on the silicon-containing surface, wherein the one or more refractory metal precursor compounds are of the formula MYn (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;
- and
- contacting a vapor comprising one or more disilazanes with the semiconductor substrate or substrate assembly having the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on one or more silicon-containing surfaces of the semiconductor substrate or substrate assembly, wherein the one or more disilazanes are of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3.
Dependencies are inferred from the claim text.