Interconnecting process and method for fabricating complex dielectric barrier alyer
AssigneeUnited Microelectronics Corp.
InventorsYI-CHING WU, CHRIS CHEN, CHIH-HSIANG SHIAU, NUNO CHEN, LEONARD CHEN
Life of this patent
Estimating the term…
Abstract
An interconnecting process is described. First, a dielectric layer with a plurality of openings is provided. Then, a metallic layer is formed to fill up the openings. A first dielectric barrier layer is formed to cover the dielectric layer and the metallic layer. Thereafter, a second dielectric barrier layer is formed over the first dielectric barrier layer. The second dielectric barrier layer is used to repair the first dielectric barrier layer and improve the reliability and yield of the process.
Claims11
1-11. (canceled)
A method of fabricating a complex dielectric barrier layer over a substrate with a dielectric layer thereon and a plurality of metallic interconnects in the dielectric layer, the method comprising the steps of:
- forming a first dielectric barrier layer over the dielectric layer to cover the metallic interconnects and the dielectric layer;
- and
- forming a second dielectric barrier layer over the first dielectric barrier layer to repair the first dielectric barrier layer, wherein the first dielectric barrier layer and the second dielectric barrier layer together form a complex dielectric barrier layer.
Dependencies are inferred from the claim text.