Method for direct electroplating of copper onto a non-copper plateable layer

A process for the formation of an interconnect in a semiconductor structure, the process comprising the steps of:

• forming a dielectric layer on a substrate;
• forming a first barrier layer on the dielectric layer;
• forming a second barrier layer on the first barrier layer, wherein the second barrier layer is selected from the group consisting of ruthenium, platinum, palladium, rhodium and iridium and wherein the formation of the second barrier layer is manipulated so that the bulk concentration of oxygen in the second barrier layer is 20 atomic percent or less;
• treating the second barrier layer so as to reduce the amount of oxide on the surface of the second barrier layer;
• and
• directly forming a conductive layer on the second barrier layer.

A process for the formation of an interconnect in a semiconductor structure, the process comprising the steps of:

• forming a dielectric layer on a substrate;
• forming a first barrier layer on the dielectric layer;
• forming a second barrier layer on the first barrier layer by one of chemical vapor deposition (CVD) and atomic layer deposition (ALD), wherein the second barrier layer is selected from the group consisting of ruthenium, platinum, palladium, rhodium and iridium and wherein the formation of the second barrier layer is manipulated so that the bulk concentration of oxygen in the second barrier layer is reduced to a level at which a subsequently formed conductive layer appears bright and shiny;
• and
• directly forming a conductive layer on the second barrier layer, the conductive layer being bright and shiny due to such reduced level of the bulk concentration of oxygen in the second barrier layer.