Substrate processing including a masking layer
AssigneeIntermolecular, Inc.
InventorsZachary Fresco, Chi-I Lang, Sandra Malhotra, Tony Chiang, Thomas Boussie, Nitin Kumar, Jinhong Tong, Anh Duong
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Abstract
Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
Claims108
A method for substrate processing, comprising:
- forming a material layer on a substrate;
- selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer for subsequent substrate processing;
- and
- normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
A method of processing a substrate, comprising:
- forming a patterned surface comprising exposed dielectric and conductive regions on the substrate;
- and
- normalizing the dielectric layer by selectively depositing a molecular masking layer (MML) on a region of the dielectric layer, wherein the normalizing includes determining a composition of the MML to condition the dielectric layer for uniform compatibility with at least one subsequent process.
A semiconductor device comprising:
- conductive regions including electrically conductive material;
- dielectric regions adjacent the conductive regions;
- and
- a masking layer adjoining a surface of the dielectric region and normalizing the surface of the dielectric region, the masking layer comprising a plurality of constituents, wherein at least one of the constituents is determined based on compatibility with subsequent processing.
A method of forming a semiconductor substrate, comprising:
- receiving a substrate including a patterned dielectric and exposed conductive surfaces;
- processing at least a portion of the substrate using a chemical process;
- and
- normalizing the substrate to reduce effects of variations in the chemical process on a subsequent process applied to the substrate, the normalizing including depositing a molecular masking layer (MML) on the substrate.
A method of forming a molecular masking layer on a dielectric, comprising:
- forming a first moiety for bonding to the dielectric;
- forming a second moiety for compatibility with a chemical process;
- and
- forming a masking layer on the dielectric by selectively depositing a composition including the first moiety and the second moiety on a region of the dielectric, wherein the masking layer conditions the dielectric layer for compatibility with a subsequent chemical process.
A method comprising:
- configuring a first moiety for compatibility with one or more of a first set of processes and a substrate;
- configuring a second moiety for compatibility with the first moiety and a second set of processes;
- and
- normalizing the substrate relative to subsequent processing by forming a masking layer on the substrate, wherein forming the material layer includes selectively depositing the first moiety and the second moiety on at least one region of a substrate.
Dependencies are inferred from the claim text.