Method for forming metal line in a semiconductor device
AssigneeDongbu Hi Tek Co., Ltd.
InventorsIn-Cheol Baek, Han-Choon Lee
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Abstract
A method for forming a metal line of a semiconductor device includes forming an interlayer insulation film over a semiconductor substrate, forming a trench for exposing at least a portion of the semiconductor substrate by using a selective etching process, and forming a diffusion barrier layer over the interlayer film and the inner walls of the trench, by using a plasma enhanced atomic layer deposition process in which a high frequency power generator is set to have a frequency of 13.56 MHz. The plasma enhanced atomic layer deposition process is performed with a base pressure in a chamber maintained at 1×10−8 to 3×10−7 torr.
Claims8
A method comprising:
- forming an interlayer insulation film over a semiconductor substrate;
- forming a trench exposing at least a portion of the semiconductor substrate by using a selective etching process;
- and
- forming a diffusion barrier layer over the interlayer film and an inside wall of the trench by using a plasma enhanced atomic layer deposition process in which a high frequency power generator is set to a frequency of 13.56 MHz.
A method comprising:
- forming an interlayer insulation film over a semiconductor substrate;
- forming a trench exposing at least a portion of the semiconductor substrate by using a selective etching process;
- and
- forming a diffusion barrier layer over the interlayer film and the inner walls of the trench by using a plasma enhanced atomic layer deposition process in which 50 to 150 sccm of H2 gas and 20 to 100 sccm of NH3 gas are injected as a reaction gas.
Dependencies are inferred from the claim text.