Small electrode for resistance variable devices

A method of forming a memory element, the method comprising:

• forming a first electrode such that a first end of the first electrode is larger than a second end of the first electrode;
• forming a second electrode;
• and
• forming a resistance variable material layer between the first and second electrodes, the second end of the first electrode being formed in contact with the resistance variable material.

A method of forming a memory element, the method comprising:

• forming a first insulating layer over a substrate;
• forming a mask over the first insulating layer;
• forming a first opening within the first insulating layer and the mask;
• widening a portion of the first opening within the first insulating layer to form a second opening;
• depositing a conductive material over the mask and through the first and second openings;
• rotating the substrate while depositing the conductive material, the conductive material being deposited in a single direction, such that the conductive material forms a cone-like structure on the substrate, the cone-like structure being a first electrode;
• removing a portion of the conductive material that is over the mask;
• removing the mask;
• forming a second insulating layer in the second opening;
• forming at least one layer of resistance variable material over the first and second insulating layers and electrically coupled to the first electrode;
• and
• forming a second electrode over the at least one layer of resistance variable material.

A method of forming a memory element, the method comprising:

• forming a first photoresist layer over a substrate;
• forming a second photoresist layer over the first photoresist layer;
• forming a first opening within the first photoresist layer;
• forming a second opening within the second photoresist layer, the second opening being larger than the first opening;
• depositing a conductive material over the mask and through the first and second openings;
• rotating the substrate while depositing the conductive material, the conductive material being deposited in a single direction, such that the conductive material forms a cone-like structure on the substrate, the cone-like structure being a first electrode;
• removing a portion of the conductive material over the second photoresist layer;
• removing the first and second photoresist layers;
• forming at least one layer of resistance variable material over and electrically coupled to the first electrode;
• and
• forming a second electrode over the at least one layer of resistance variable material.