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US 2007/0166982 A1Published application
Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase
AssigneeAdvanced Micro Devices, Inc.
InventorsAxel Preusse, Susanne Wehner, Markus Nopper
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Abstract
By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.
Claims26
A method, comprising:
- depositing a metal over a patterned layer of a semiconductor device by applying an electrolyte solution and performing an electroless wet chemical deposition process;
- and
- establishing an externally generated electric field in said electrolyte solution while applying said electrolyte solution to further deposit said metal.
A method, comprising:
- forming a barrier layer over a surface portion of an opening formed in a dielectric layer of a semiconductor device by a wet chemical deposition process;
- forming a seed layer over said barrier layer by a wet chemical deposition process;
- and
- filling said opening with a metal by an electroplating process using said seed layer.
1 more element
Dependencies are inferred from the claim text.