Chemical vapor deposition chamber for depositing titanium silicon nitride films for forming phase change memory devices
AssigneeSTMicroelectronics S.r.I.
InventorsJong-Won Lee, Roger Hamamjy
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Abstract
Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times. Two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.
Claims20
A method of forming a titanium silicon nitride layer comprising:
- independently generating a first vapor of tetrakis-(dimethylamino) titanium and a second vapor tris-(dimethylamino) silane;
- and
- combining said first and second vapors in desired proportion to form a titanium silicon nitride layer.
An apparatus comprising:
- a first bubbler to form a first vapor of tetrakis-(dimethylamino) titanium;
- a second bubbler to form a second vapor of tris-(dimethylamino) silane;
- and
- a deposition chamber to deposit said first and second vapors on a wafer to form a layer of titanium silicon nitride.
A method of fabricating a phase change memory device comprising:
- forming a first electrode;
- forming a heater in contact with said first electrode, the heater being formed by depositing a titanium silicon nitride layer, wherein the depositing step includes adjusting a silicon content of the titanium silicon nitride layer;
- forming a phase change memory region in contact with said heater;
- forming a selection region connecting with said phase change memory region;
- and
- forming a second electrode in contact with said selection region.
Dependencies are inferred from the claim text.