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US 2007/0166972 A1Published application
Semiconductor device and manufacturing method
OwnerYoung-Tack Parkinventor
Life of this patent
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Abstract
A semiconductor substrate includes a plurality of isolation regions formed therein and having a trench in a region between the isolation wells, a gate insulating layer formed within the trench, a gate electrode formed on the gate insulating layer filling the trench, and source and drain electrodes formed on the substrate between the gate electrode and the isolation wells.
Claims20
A semiconductor device, comprising:
- a trench formed in a semiconductor substrate;
- a gate electrode formed in the trench;
- a gate insulating layer formed in the trench, wherein the gate electrode is formed over the gate insulating layer;
- and
- a at least two isolation wells formed in the semiconductor substrate, wherein the trench is between the at least two isolation wells.
2 more elements
A method comprising:
- forming a trench in a semiconductor substrate;
- forming a gate electrode in the trench;
- forming a gate insulating layer in the trench, wherein the gate electrode is formed over the gate insulating layer;
- and
- forming a plurality of isolation wells in the semiconductor substrate.
2 more elements
Dependencies are inferred from the claim text.