Process for adjusting the strain on the surface or inside a substrate made of a semiconductor material
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorYves-Matthieu Le Vaillant
Life of this patent
Estimating the term…
Abstract
This invention relates to a process for adjusting the strain in a strained layer on a substrate. The process steps include identifying one or more regions of the strained layer wherein the strain is to be adjusted; implanting elements into at least one of the regions thus identified in the strained layer; annealing the substrate with the strained layer to a temperature maintained for a sufficiently long time to cure crystalline defects caused by the implantation in the implanted region or regions.
Claims19
A process for adjusting strain in a strained layer on a substrate which comprises:
- identifying one or more regions of the strained layer where the strain is to be adjusted;
- implanting elements into at least one of the identified regions in the strained layer in an amount sufficient to cure or reduce defects when subjected to elevated temperatures;
- and
- annealing the substrate and strained layer by heating to a temperature for a time sufficient to reduce or cure crystalline defects in the one or more regions of the strained layer which include the implanted elements.
An annealed structure comprising a strained layer and a substrate, wherein the strained layer includes one or more regions that include implanted elements so that during annealing the strain is adjusted to reduce or cure crystalline defects.
Dependencies are inferred from the claim text.