Method for controlling conductivity of ga2o3 single crystal

Abstract

To provide a method of controlling a conductivity of a Ga2O3 system single crystal with which a conductive property of a β-Ga2O3 system single crystal can be efficiently controlled. The light emitting element includes an n-type β-Ga2O3 substrate, and an n-type β-AlGaO3 cladding layer, an active layer, a p-type β-AlGaO3 cladding layer and a p-type β-Ga2O3 contact layer which are formed in order on the n-type β-Ga2O3 substrate. A resistivity is controlled to fall within the range of 2.0×10−3 to 8×102 Ωcm and a carrier concentration is controlled to fall within the range of 5.5 ×1015 to 2.0×1019/cm3 by changing a Si concentration within the range of 1×10−5 to 1 mol %.

Dependencies are inferred from the claim text.