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US 2007/0166966 A1Published application
Deposition from liquid sources
AssigneeASM America, Inc.
InventorsMichael Todd, Ivo Raaijmakers
Life of this patent
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Abstract
A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
Claims20
A method for semiconductor processing, comprising:
- exposing a liquid silicon precursor to a hot ambient to convert the liquid silicon precursor into a precursor gas, the liquid silicon precursor comprising trisilane;
- and
- flowing the precursor gas through a process chamber to deposit a silicon-containing film on a semiconductor substrate in the process chamber,
- wherein a temperature of the hot ambient is greater than a boiling point of trisilane under processing conditions at a location where converting a liquid silicon precursor occurs.
1 more element
A method for semiconductor fabrication, comprising:
- metering a precursor liquid comprising trisilane;
- vaporizing the precursor liquid after metering;
- and
- injecting the vaporized precursor liquid into the process chamber to deposit a silicon-containing film on a semiconductor substrate in the process chamber.
1 more element
Dependencies are inferred from the claim text.