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US 2007/0166964 A1Published application
Precursor Containing Copper Indium And Gallium For Selenide (Sulfide) Compound Formation
AssigneeSoloPower, Inc.
InventorBulent Basol
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Abstract
The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.
Claims13
A method of forming a Cu(In,Ga)(S,Se)2 semiconductor layer on a base comprising;
- growing a conductive layer on a substrate thus forming a base;
- depositing on the conductive layer a substantially metallic film comprising copper;
- electroplating a gallium film over the substantially metallic film;
- electroplating an indium film over the gallium film, thereby providing a precursor stack that has an indium-rich top surface with a melting temperature of higher than that of gallium;
- and
- reacting the precursor stack with at least one of selenium and sulfur.
3 more elements
A method of forming a Cu(In,Ga)(S,Se)2 semiconductor layer on a base comprising;
- depositing a first film comprising only copper on the base using a physical vapor deposition method;
- electroplating a layer comprising indium and gallium over the copper film, thus forming a precursor stack;
- and
- reacting the precursor stack with at least one of selenium and sulfur.
1 more element
Dependencies are inferred from the claim text.