Method of forming a semiconductor thin film
AssigneeSamsung Electronics Co., Ltd.
InventorsYonghoon Son, Sungkwan Kang, Jongwook Lee
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Abstract
A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openings with a semiconductor seed layer; forming an amorphous layer on the seed layer and the insulation layer; transforming the amorphous layer to a polycrystalline layer by exposing the amorphous layer to a first laser irradiation at a first energy level; and forming a single semiconductor crystalline film by annealing the polycrystalline layer and the semiconductor seed layer with a second laser irradiation at a second energy level.
Claims26
A method of fabricating a semiconductor thin film, comprising:
- forming an insulation layer on a semiconductor substrate;
- etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings;
- filling the openings with a semiconductor seed layer;
- forming an amorphous layer on the seed layer and the insulation layer;
- transforming the amorphous layer to a polycrystalline layer by exposing the amorphous layer to a first laser irradiation at a first energy level;
- and
- forming a single semiconductor crystalline film by annealing the polycrystalline layer and the semiconductor seed layer with a second laser irradiation at a second energy level.
A method of fabricating a semiconductor thin film, comprising:
- forming an insulation layer on a semiconductor substrate;
- etching the insulation layer to form a plurality of openings exposing the substrate;
- forming a semiconductor seed layer in the openings;
- forming a polycrystalline silicon layer on the seed layer and the insulation layer;
- and
- annealing the polycrystalline layer and the silicon seed layer to form a single crystalline film.
A semiconductor thin film device, comprising:
- a substrate having a semiconductive material;
- an insulating layer formed on the substrate, the insulation layer having a plurality of trenches that extend from the top to the bottom of the insulating layer;
- and
- a thin film formed on the insulating layer, wherein the thin film and the trenches comprise the semiconductive material with a single crystalline structure.
Dependencies are inferred from the claim text.