Methods of forming layers comprising epitaxial silicon
AssigneeMicron Technology, Inc.
InventorsNirmal Ramaswamy, Gurtej Sandhu, Chris Carlson, F. Gealy
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Abstract
The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.
Claims32
1-74. (canceled)
A method of forming a layer comprising epitaxial silicon, comprising:
- providing an opening within a first material received over a monocrystalline material, the opening comprising opposing sidewalls;
- forming opposing walls within the opening which are laterally displaced inwardly of the opposing sidewalls, a space being received between the opposing walls and the opposing sidewalls;
- and
- epitaxially growing a silicon-comprising layer between the opposing walls from monocrystalline material exposed at a base of the opening.
A method of forming a layer comprising epitaxial silicon, comprising:
- providing an opening within a first material received over a monocrystalline material, the opening comprising opposing sidewalls;
- depositing a second material over the first material within the opening and along the opposing sidewalls and to less than completely fill the opening, the second material being different in composition from that of the first material;
- depositing a third material over the second material within the opening to less than completely fill remaining volume of the opening, the third material being different in composition from that of the second material;
- etching at least some of the second material from between the first and third materials within the opening effective to form a space between the first and third materials;
- and
- after the etching, epitaxially growing a silicon-comprising layer within the opening from monocrystalline material exposed at a base of the opening.
Dependencies are inferred from the claim text.