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US 2007/0166959 A1Published application
Process for producing a photoelectric conversion device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuyuki Arai
Life of this patent
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Abstract
A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas element to a second heat treatment. That is, the rare gas element is incorporated into the second semiconductor film to generate a strain field as a gettering site.
Claims44
A process for producing a semiconductor device, comprising:
- forming a first semiconductor film having an amorphous structure;
- adding an element for promoting crystallization to the first semiconductor film having the amorphous structure;
- conducting a first heat treatment to form a first semiconductor film having a crystal structure;
- forming a second semiconductor film containing a rare gas element over the first semiconductor film having the crystal structure;
- conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film;
- and
- removing the second semiconductor film,
- wherein the second heat treatment is conducted by rapid thermal annealing.
5 more elements
A process for producing a semiconductor device, comprising:
- forming a first semiconductor film having an amorphous structure;
- adding an element for promoting crystallization to the first semiconductor film having the amorphous structure;
- conducting a first heat treatment to form a first semiconductor film having a crystal structure;
- forming a barrier layer over a surface of the first semiconductor film having the crystal structure;
- forming a second semiconductor film containing a rare gas element over the barrier layer,
- conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film, and
- removing the second semiconductor film,
- wherein the second heat treatment is conducted by rapid thermal annealing.
5 more elements
A process for producing a semiconductor device, comprising:
- forming a first semiconductor film having an amorphous structure;
- adding an element for promoting crystallization to the first semiconductor film having the amorphous structure;
- conducting a first heat treatment to form a first semiconductor film having a crystal structure;
- forming a second semiconductor film over the first semiconductor film having the crystal structure;
- adding a rare gas element to the second semiconductor film;
- conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film, and
- removing the second semiconductor film,
- wherein the second heat treatment is conducted by rapid thermal annealing.
5 more elements
A process for producing a semiconductor device, comprising:
- forming a first semiconductor film having an amorphous structure;
- adding an element for promoting crystallization to the first semiconductor film having the amorphous structure;
- conducting a first heat treatment to form a first semiconductor film having a crystal structure;
- forming a barrier layer over a surface of the first semiconductor film having the crystal structure;
- forming a second semiconductor film over the barrier layer;
- adding a rare gas element to the second semiconductor film;
- conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film;
- and
- removing the second semiconductor film,
- wherein the second heat treatment is conducted by rapid thermal annealing.
7 more elements
A process for producing a semiconductor device, comprising:
- forming a first semiconductor film having an amorphous structure;
- adding an element for promoting crystallization to the first semiconductor film having the amorphous structure;
- conducting a first heat treatment to form a first semiconductor film having a crystal structure;
- forming a second semiconductor film over the first semiconductor film having the crystal structure, wherein a rare gas element is added to the second semiconductor film;
- conducting a second heat treatment to segregate the element for promoting crystallization into the second semiconductor film;
- and
- removing the second semiconductor film,
- wherein the second heat treatment is conducted by rapid thermal annealing.
5 more elements
Dependencies are inferred from the claim text.